The occurrence of Plasma Extraction Transit Time oscillations under certain conditions in high power semiconductors are investigated experimentally and theoretically. The experimental obtained data allow for detailed studies of influencing parameters and are compared with theoretical models from the literature predicting the oscillation frequency. Refinements on the models are carried out for better matching the experimental findings. The accuracy of the oscillation prediction is improved.
Vortrag von Michael Heeb, University of Kassel, Deutschland im Konferenztrack „Devices for Efficient Converters“ auf der PCIM 2009. Herr Heeb hat auch den Young Engineer Award gewonnen.