FeFET enables the conversion of CMOS logic transistors into efficient, non-volatile memories, regardless of whether it is a planar, fin or nanowire transistor. The feasibility of the concept to make use of the 22 nm FDSOI technology of Globalfoundries has already been demonstrated. FeFETs benefit directly from the massive investments and innovations that lead to scaling from standard CMOS processes to 7nm nodes and beyond.
Single transistor memory based on ferroelectric HfO2 offers three major advantages over competing novel memory solutions such as MRAM (magnetoresistive RAM), PCM (phase change RAM) or RRAM (resistive RAM): First, the FeFET memories show a high current driving capability at very fast read speeds, while the efficient switching of the memory cells leads to fast writing at extremely low power consumption. Secondly, FeFET memories are exceptionally resistant to environmental influences such as magnetic fields, radiation and extreme temperatures. Thirdly, FeFETs are based on well established high-k metal gate CMOS technologies and thus can take advantage of their scaling benefits. Existing production facilities can be used and no additional complex and expensive manufacturing processes are required.
CEO Dr. Stefan Müller is confident on the very high potential of FeFET memory and in FMCs role in establishing the technology: „We want to become the ARM of memory.“
The – much longer and more comprehensive – German version of this article will provide you with more details on this potentionally break through technology – including several images; Google Translator or DeepL will help you with the translation.
Dr.-Ing. Nicole Ahner
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