How does inductance affect the switching losses of an IGBT module and which role plays the design of the power semiconductors under this aspect? The stray inductance influences the total switching losses and also the snap-off behaviour of IGBT modules. With its newest 1200V IGBT generation Infineon offers three different versions which provide a different loss–softness trade-off. In this paper we will review, how the switching losses can be optimized by a suitable design and component selection.
Alexander Ciliox, Infineon Technologies, Deutschland eröffnet den Konferenztrack „Devices for Efficient Converters“ auf der PCIM 2009