This paper introduced Infineon Technologies’ newly developed 650V IGBT and diode chips. The same characteristics as 600V IGBT3 and Emitter Controlled3 chips have been kept and 50V more blocking-voltage is realized. Utilizing these chips, this paper also introduced the newly developed power modules dedicated for three level NPC topology based inverters. The first applications benefit from the new chips and power modules will be UPS and photovoltaic.
Uwe Jansen, Infineon Technologies, Deutschland, spricht im Track „New IGBT Modules“ auf der PCIM 2009.